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Abstract: Nanoscale heat transfer through conductive filaments made of oxygen vacancy in RRAM devices have been studied theoretically for multi-valence cerium oxide (CeO2) based resistive switching material. A thermodynamic model is implemented for the movement of oxygen ions due to Julian heat during the set and reset conditions in CeO2-RRAM device. A physics based numerical modeling is also developed on the basis of temperature and electric field enhanced relocation of oxygen vacancies inside CeO2 to predict the accurate temperature build up inside conductive filaments.

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